Applied Materials, Inc. today announced it is working with Micron Technology to develop next-generation DRAM, high-bandwidth memory (HBM) and NAND solutions that increase the energy-efficient performance of AI systems, bringing together advanced R&D capabilities from Applied's EPIC Center in Silicon Valley and Micron's state-of-the-art innovation center in Boise, Idaho to strengthen the semiconductor innovation pipeline in the United States.

"Applied Materials and Micron have a long-standing partnership focused on driving higher performance and more energy-efficient advanced memory chips by pushing the boundaries of materials engineering and manufacturing innovation," said Gary Dickerson, President and CEO of Applied Materials. "We are excited to deepen our collaboration with Micron as a founding partner at the EPIC Center as next-generation memory technologies play an increasingly vital role in the future of AI systems."