Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today announced the Rambus HBM3-ready memory interface subsystem consisting of a fully-integrated PHY and digital controller. Supporting breakthrough data rates of up to 8.4 Gbps, the solution can deliver over a terabyte per second of bandwidth, more than double that of high-end HBM2E memory subsystems. With a market-leading position in HBM2/2E memory interface deployments, Rambus is ideally suited to enable customers' implementations of accelerators using next-generation HBM3 memory.

"The memory bandwidth requirements of AI/ML training are insatiable with leading-edge training models now surpassing billions of parameters," said Soo Kyoum Kim, associate vice president, Memory Semiconductors at IDC. "The Rambus HBM3-ready memory subsystem raises the bar for performance enabling state-of-the-art AI/ML and HPC applications."