SK hynix has announced iHBM, a new thermal design for future High Bandwidth Memory products
The company says the solution embeds integrated cooling elements, or ICEs, inside the HBM package. These elements are made from an electrically non-conductive silicon-based material and add another thermal path inside the package.
SK hynix says iHBM targets the Die-to-Die Physical Layer area, also known as D2D PHY. This is the interface between the HBM base die and the AI accelerator, and according to the company, it is also one of the areas with the highest heat concentration.
The current HBM design removes heat indirectly through the core die. iHBM changes this by placing the cooling elements directly near the D2D PHY region. SK hynix claims this reduces thermal resistance by 30% and improves stable operation under high-temperature and high-pressure conditions.
Coming to HBM5
The company says iHBM will use its wafer-level packaging process based on MR-MUF technology. This should allow the new thermal design to be used with existing System-in-Package designs with fewer layout changes for customers.
SK hynix says iHBM is planned for next-generation HBM products, including HBM5. The company did not name any customer products or shipping dates.
Source: SK Hynix
