SK hynix Inc. announced today that it has shipped samples of HBM4E, a next-generation DRAM for AI, to major customers. "The company was able to deliver samples of the 12-stack HBM4E on schedule thanks to its advanced HBM development and production expertise for HBM," said SK hynix, adding that "We will work closely with partners for mass production in a timely manner." The 12-layer HBM4E shows improvements in both performance and power efficiency. The product features a maximum data processing speed of 16 Gbps per pin and power efficiency that is up more than 20 percent from previous models. These enhancements improve data processing capabilities for AI training and inference.

The HBM4E reduces data transfer latency through its latest interface and design optimization while maintaining stable operation in high-bandwidth environments. This enables customers to increase efficiency in processing data for AI datacenters and large-scale computing systems. SK hynix utilizes Advanced MR-MUF technology for HBM4E products to achieve a 48 GB capacity in a 12-layer stack while ensuring structural stability. In particular, the company has also improved heat resistance by 17 percent, compared to the preceding HBM4, enabling stable operation of memory chips in high-performance computing environments.