SK hynix starts customer sampling of 12-high HBM4E memory
SK hynix has started shipping samples of its next-generation HBM4E memory to major customers. The company confirmed that the new product uses a 12-layer stack and targets AI accelerators, datacenters and large-scale computing systems.
The new HBM4E sample reaches 48GB capacity in a 12-high package. SK hynix says the memory runs at up to 16 Gbps per pin and improves power efficiency by more than 20% compared with previous products.
48GB in a 12-high stack
Last year, memory vendors showed HBM4 plans with 32GB capacity for 12-high stacks and 48GB for 16-high stacks. SK hynix is now confirming 48GB capacity with 12 layers for HBM4E, which means higher density per stack.
The company also says HBM4E reduces transfer latency through a newer interface and design changes. SK hynix does not list full bandwidth per stack in today’s announcement, but 16 Gbps per pin is the key speed figure confirmed for this sample.
Source: SK Hynix
Advanced MR-MUF packaging
SK hynix is using its Advanced MR-MUF technology for the new HBM4E package. MR-MUF is the company’s underfill process used between stacked chips. According to SK hynix, the updated process reduces thermal resistance by 17% compared with HBM4.
Lower thermal resistance should help with sustained operation in AI accelerators, where HBM stacks sit close to high-power processors. SK hynix says the package also improves structural stability for the 12-layer design.
Source: SK Hynix
The company has not announced a mass production date for HBM4E. It only says that the samples were delivered on schedule and that it will work with partners to prepare mass production “in a timely manner.”
Samsung already announced 12-layer HBM4E sample shipments in late May, also claiming up to 16 Gbps per pin. SK hynix’s announcement confirms that the HBM4E race is now moving from public roadmaps to customer qualification.
Source: SK Hynix
