Samsung UFS 5.0 storage reaches 10.8 GB/s read speed

Samsung confirms UFS 5.0 storage with over 40% better power efficiency

Mass production is planned for Q4

Samsung has announced its first UFS 5.0 storage solution for next-generation mobile devices. The company says the new package reaches up to 10.8 GB/s sequential read speed and up to 9.5 GB/s sequential write speed.

This puts Samsung’s UFS 5.0 at more than twice the performance of its UFS 4.1 solution. Samsung is linking the increase to on-device AI workloads, where phones and compact devices need faster access to local model data.

Samsung also claims more than 40% better power efficiency compared with its UFS 4.1 storage. The company says this comes from clock gating and multi-voltage technologies, which reduce the power needed to move the same amount of data.

Source: Samsung

The package measures 7.5 mm × 13 mm × 0.9 mm. Samsung says this is 16.7% smaller than the previous design, which should help vendors using it in smartphones, XR headsets, wearables and other compact devices.

JEDEC’s UFS 5.0 standard was announced in October 2025, including the 10.8 GB/s target and UFS 4.x compatibility angle.

UFS storage standard comparison
VideoCardzIntroducedInterfaceSpeed exampleMain update
UFS 3.12020MIPI M-PHY 4.1, UniPro 1.8Samsung eUFS 3.1: up to 2.1 GB/s read, 1.2 GB/s writeWrite Booster, DeepSleep and performance throttling notification
UFS 4.02022MIPI M-PHY 5.0, UniPro 2.0Samsung UFS 4.0: up to 4.2 GB/s read, 2.8 GB/s writeUp to 23.2 Gbps per lane, doubling UFS 3.1 interface speed
UFS 4.12025MIPI M-PHY 5.0, UniPro 2.0Samsung UFS 4.1: around 4.2 GB/s-class read/write trafficHost-initiated defragmentation, WriteBooster buffer resize and permanent bootable logical units
UFS 5.02026MIPI M-PHY 6.0, UniPro 3.0Samsung UFS 5.0: up to 10.8 GB/s read, 9.5 GB/s writeUp to 10.8 GB/s bandwidth for AI, mobile and edge devices

Source: Samsung PR