Samsung on July 14 formally launched the 990, its value-segment M.2 NVMe SSD. Not to be confused with the 990 EVO, another DRAMless SSD from the company that uses TLC NAND flash, the new 990 implements QLC NAND flash, and relies on controller-level optimization to shore up performance. Built in the M.2-2280 form-factor, the Samsung 990 features an M.2 NVMe Gen 4 (PCI-Express 4.0 x4) host interface, and is driven by a Samsung Piccolo-Q DRAMless controller. It uses the company's in-house V9 series 280-layer 3D QLC NAND flash memory.

The Samsung 990 come in two capacity variants, 1 TB and 2 TB, priced at $270 and $530, respectively. The 1 TB variant offers sequential reads of up to 7150 MB/s with up to 6450 MB/s sequential writes, with up to 700,000 IOPS 4K random reads and up to 1.1 million IOPS 4K random writes; while the 2 TB variant offers slightly higher performance, with up to 7250 MB/s sequential reads, up to 6450 MB/s sequential writes, up to 850,000 IOPS 4K random reads, and up to 1.2 million IOPS 4K random writes. Where the 990 differs significantly from the TLC-based 990 EVO Plus, is write-endurance. The 2 TB variant offers 800 TBW, while the 1 TB variant offers a paltry 400 TBW. For reference, the 2 TB 990 EVO Plus offers 1200 TBW, and 1 TB 990 EVO Plus offers 600 TBW. Both variants are backed by 3-year warranties.