SK hynix is preparing for the mass production of its next-generation LPDDR6 memory, according to the South Korean outlet Herald. While this information isn't surprising, the timeline is now set for the second half of 2026, which began in July. Earlier rumors suggested mass production would occur in the first half of the year, as testing and trial production were completed in March. Previously, SK hynix announced that its LPDDR6 memory modules would feature a 16 Gb capacity on the sixth-generation 10 nm node, known as 1c. Although the exact speed of LPDDR6 is not yet known, it was previously reported that SK hynix is preparing modules capable of running at speeds up to 14.4 Gbps, offering a significant throughput boost over the previous-generation LPDDR5X memory. The company claims a 33% improvement over LPDDR5X, which topped out at 10.7 Gbps, aligning with the 14.4 Gbps figure for LPDDR6.

LPDDR6 will bring numerous improvements, particularly in density, power efficiency, and speed. SK hynix is also expecting significant power efficiency optimizations exceeding 20% thanks to the new technologies enabling LPDDR6 to operate. This generation of low-power DDR memory uses a sub-channel structure that allows the memory channels to operate selectively, processing only the necessary data paths. This means not all channels need to be engaged when they are not required. Additionally, LPDDR6 incorporates Dynamic Voltage and Frequency Scaling (DVFS), which optimizes power consumption and performance by dynamically adjusting the voltage and frequency depending on the scenario.