The NVIDIA GH100 silicon powering the next-generation NVIDIA H100 compute processor is a monstrosity on paper, with an NVIDIA whitepaper published over the weekend revealing its key specifications. NVIDIA is tapping into the most advanced silicon fabrication node currently available from TSMC to build the compute die, which is TSMC N4 (4 nm-class EUV). The H100 features a monolithic silicon surrounded by up to six on-package HBM3 stacks.

The GH100 compute die is built on the 4 nm EUV process, and has a monstrous transistor-count of 80 billion, a nearly 50% increase over the GA100. Interestingly though, at 814 mm², the die-area of the GH100 is less than that of the GA100, with its 826 mm² die built on the 7 nm DUV (TSMC N7) node, all thanks to the transistor-density gains of the 4 nm node over the 7 nm one.