NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. Relevant patent applications were published with the United States Patent Application Publication on April 6, 2023.

"3D X-DRAM will be the absolute future growth driver for the Semiconductor industry," said Andy Hsu, Founder and CEO of NEO Semiconductor and an accomplished technology inventor with more than 120 U.S. patents. "Today I can say with confidence that Neo is becoming a clear leader in the 3D DRAM market. Our invention, compared to the other solutions in the market today, is very simple and less expensive to manufacture and scale. The industry can expect to achieve 8X density and capacity improvements per decade with our 3D X-DRAM."