Micron Technology, Inc. (Nasdaq: MU), today demonstrated its industry leadership by announcing its 32Gb monolithic die-based 128 GB DDR5 RDIMM memory featuring best-in-class performance of up to 8000 MT/s to support data center workloads today and into the future. These high-capacity, high-speed memory modules are engineered to meet the performance and data-handling needs of a wide range of mission-critical applications in data center and cloud environments, including artificial intelligence (AI), in-memory databases (IMDBs) and efficient processing for multithreaded, multicore count general compute workloads.

Powered by Micron's industry-leading 1β (1-beta) technology, the 32Gb DDR5 DRAM die-based 128 GB DDR5 RDIMM memory delivers the following enhancements over competitive 3DS through-silicon via (TSV) products:

• more than 45% improved bit density
• up to 24% improved energy efficiency
• up to 16% lower latency
• up to a 28% improvement in AI training performance