Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed HBM3E 12H, the industry's first 12-stack HBM3E DRAM and the highest-capacity HBM product to date. Samsung's HBM3E 12H provides an all-time high bandwidth of up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36 gigabytes (GB). In comparison to the 8-stack HBM3 8H, both aspects have improved by more than 50%.

"The industry's AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need," said Yongcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "This new memory solution forms part of our drive toward developing core technologies for high-stack HBM and providing technological leadership for the high-capacity HBM market in the AI era."