Raytheon Technologies (NYSE: RTX), a leading aerospace and defense technology company, and GLOBALFOUNDRIES (GF ), the global leader in feature-rich semiconductor manufacturing, will collaborate to develop and commercialize a new gallium nitride on silicon (GaN-on-Si) semiconductor that will enable game-changing radio frequency performance for 5G and 6G mobile and wireless infrastructure applications.

Under the agreement, Raytheon Technologies will license its proprietary gallium nitride on silicon technology and technical expertise to GF, which will develop the new semiconductor at its Fab 9 facility in Burlington, Vermont. Gallium nitride is a unique material used to build high-performance semiconductors that can handle significant heat and power levels. This makes it ideal to handle 5G and 6G wireless signals, which require higher performance levels than legacy wireless systems.