Samsung Electronics, the world leader in advanced memory technology, today announced the market launch of 'Flashbolt', its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high performance computing (HPC) systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner.

"With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "Samsung will continue to deliver on its commitment to bring truly differentiated solutions as we reinforce our edge in the global memory marketplace."