New HBM2E stacks eight 16Gb DRAM dies to achieve 16GB package capacity and ensures a stable data transfer speed at 3.2Gbps Samsung Electronics, the world leader in advanced memory technology, today announced the market launch of ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high performance computing (HPC) systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner. “With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the...

Keep on reading: (PR) Samsung announces 3rd-generation 16Gb HBM2E memory