Kioxia Corporation, a world leader in memory solutions, today announced it has commenced sample shipments of 512 Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASH 3D flash memory technology. It plans to commence mass production in fiscal year 2025. The devices are designed to support applications requiring high performance and exceptional power efficiency in the low- to mid-level storage capacities. They will also be integrated into Kioxia's enterprise SSDs, in particular those that aim to maximize GPU efficiency in AI systems.

Kioxia continues to pursue a dual-axis strategy to address the diverse needs of cutting-edge applications while delivering competitive products providing optimal investment efficiency. The two axes are:

• 9th generation BiCS FLASH products: these achieve high performance at reduced production cost by leveraging CBA (CMOS directly Bonded to Array) technology, which integrates existing memory cell technologies with the latest CMOS technology.
• 10th generation BiCS FLASH products: these incorporate an expansion in the number of memory layers to meet the expected future demand for larger-capacity, high-performance solutions.