Samsung is running into some unexpected issues with its ninth-generation NAND flash memory technology. The tech giant has been forced to delay full-scale production of its V9 QLC NAND chips until at least the first half of 2026, according to industry reports from ZDNet. Samsung's V9 NAND uses a 280-layer design that first hit mass production back in April 2024. The company started with TLC (triple-level cell) versions that pack 1 TB of storage, then moved on to the more complex QLC (quad-level cell) variants by September last year. But here's where things went sideways. Multiple industry insiders tell ZDNet that those first batches of V9 QLC chips had some fundamental design problems that caused performance issues.

What makes this particularly frustrating for Samsung is that while they still dominate the broader NAND market, they're actually lagging behind when it comes to QLC technology specifically. Their top-tier QLC products are still stuck using older V7 generation technology - they never even bothered releasing a QLC version of their V8 chips. Samsung did show off its next-generation V10-class TLC NAND back in February, boasting over 400 layers and 1 TB capacity. However, they haven't said when we'll actually see these chips in production. Meanwhile, the competition isn't sitting still. Over in Japan, Kioxia has been announcing its own 332-layer V10-class NAND , though they're also still working on getting it ready for mass production. Moreover, SK Hynix recently achieved a breakthrough with its first 321-layer 2 TB QLC NAND chips.