Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, welcomes AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco as first partners in its 300 mm gallium-nitride (GaN) open innovation program track for low- and high-voltage power electronics applications. This program track, part of imec's industrial affiliation program (IIAP) on GaN power electronics, has been set up to develop 300 mm GaN epi growth, and low and high voltage GaN high electron mobility transistor (HEMT) process flows. The use of 300 mm substrates will not only reduce GaN device manufacturing costs, but it will also allow the development of more advanced power electronics devices, such as efficient low-voltage point-of-load converters for CPUs and GPUs.

The recent market introduction of GaN-based fast battery chargers underscores the potential of GaN technology for power electronics applications. Backed by continuing progress made in GaN epi growth, GaN device and IC manufacturing, reliability and robustness, and system-level optimization, GaN technology is poised to enable a new generation of power electronics products. These will enter the market with reduced form factors, smaller weight, and superior energy conversion efficiency compared to Si-based solutions. Examples are on-board chargers and DC/DC converters for automotive applications, inverters for solar panels, and power distribution systems for telecom and AI data centers - where GaN-based building blocks contribute to the overall decarbonization, electrification and digitalization of society.