Samsung more details of its next-generation HBM4e memory at the OCP Global Summit aiming for per-pin speeds above 13 Gbps and a total bandwidth of 3.25 TB/s, roughly 2.5× faster than HBM3e. The company also claims more than double the power efficiency, with energy use dropping below 1.95 pJ/bit, less than half that of HBM3e. According to SeDaily and Tweaktown, the development was driven by NVIDIA's request for higher-speed memory to power its upcoming Vera Rubin AI accelerator. While the JEDEC HBM4 standard caps bandwidth at 8 Gbps per pin, NVIDIA has reportedly urged Samsung, SK hynix, and Micron to push beyond 10 Gbps. Chosun Daily reports that Samsung may dissolve its 1c DRAM yield-improvement task force to fast-track HBM4 mass production, even as early cold tests show yields below 50%. The company has reportedly skipped its usual internal production review and moved directly toward ramping production. TrendForce adds that Samsung shifted its HBM4 base die process to a 4 nm FinFET node, positioning itself ahead of competitors in both speed and manufacturing scale. Volume production of 10 Gbps-capable chips is expected to begin by late 2025.

Moreover, on Tuesday, Samsung announced its earnings for the third quarter of 2025, and surprisingly the company's operating profit rose 32% from last year to 12.1 trillion won ($8.5 billion), far exceeding market predictions of about 10 trillion won, according to TrendForce citing Reuters, ZDNet and Chosun Daily. While Samsung didn't share detailed numbers, analysts mentioned in the report estimate the semiconductor division (DS) alone earned around 5 trillion won ($3.5 billion), over 10 times its Q2 profit of 400 billion won (($281 million). A major reason for Samsung's comeback in the third quarter is the big improvement in its foundry division. This part of the business has boosted performance by running at higher capacity and winning new customers. Samsung will reveal full results, including business-by-business breakdowns, on October 30.