Intel

(PR) onsemi Unveils Vertical GaN Semiconductors

onsemi's vGaN technology is a breakthrough power semiconductor technology that sets a new benchmark for efficiency, power density and ruggedness for the age of AI and electrification. Developed and manufactured at onsemi's fab in Syracuse, NY, onsemi holds over 130 global patents covering a range of fundamental process, device design, manufacturing and systems innovations for vertical GaN technology.

"Vertical GaN is a game-changer for the industry and cements onsemi's leadership in energy efficiency and innovation. As electrification and AI reshape industries, efficiency has become the new benchmark that defines the measure of progress. The addition of vertical GaN to our power portfolio gives our customers the ultimate toolkit to deliver unmatched performance. With this breakthrough, onsemi is defining the future where energy efficiency and power density are the currency of competitiveness." Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi.
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