SK Hynix is gearing up to demonstrate its next wave of high-speed DRAM at ISSCC 2026, headlined by a 24 Gb GDDR7 chip rated for 48 Gb/s. According to ZDNet Korea the device uses a symmetric dual-channel design and updated internal interfaces to push past the 32 to 37 Gb/s speeds the industry previously expected from GDDR7. Korean outlet Global Economic News reports the per-pin rate represents more than a 70 percent jump over today's 28 Gb/s parts, raising per-chip bandwidth from 112 GB/s to 192 GB/s. At 24 Gb density, each package provides 3 GB of VRAM. That allows configurations such as 24 GB with eight chips, 36 GB with twelve, or 48 GB with sixteen. A 256-bit GPU using these devices could deliver around 1.5 TB/s of bandwidth, while a 512-bit interface would reach about 3 TB/s.

The GDDR7 paper listed for ISSCC positions the chip for mid-range AI inference hardware. SK Hynix joins Samsung and Micron in pushing GDDR7 speeds, but on paper it now targets the highest data rate of the three. Actual product clocks will likely land lower; GPU vendors routinely tune memory speeds to meet yield and power targets. GDDR7 at 24 Gb is still new to the market. Only NVIDIA's RTX PRO 6000, the 72 GB variant of the RTX PRO 5000, and the RTX 5090 Laptop currently use 3 GB modules. ISSCC papers typically appear a year or more before commercial availability, so this generation may reach data center or AI accelerator boards first. SK hynix is also introducing LPDDR6 on the same stage. The new mobile DRAM reaches 14.4 Gb/s, up sharply from LPDDR5's 9.6 Gb/s. The company is positioning it for high-performance smartphones, AI PCs, and edge devices running on-device generative AI.