During the 2025 Korea Tech Festival in Seoul, Samsung's 40 Gbps GDDR7 memory received a presidential recognition medal. This next-generation memory chip is built on Samsung's 12 nm (10 nm class) DRAM node and operates at 40 Gbps with a 3 GB (24 Gb) capacity. This announcement follows Samsung's recent sampling of its fastest-ever GDDR7 memory, which runs at 36 Gbps . With a 24 Gb capacity per chip, this translates to 3 GB of capacity, designed for the next generation of graphics cards. These are not Samsung's only 3 GB modules. The South Korean company is also producing 28 Gbps 3 GB modules, which are now in mass production, likely for NVIDIA's upcoming mid-cycle SUPER refresh.

As 3 GB modules are uncommon, the confirmation of mass production, especially starting at 28 Gbps, is a welcome addition to faster VRAM options. However, with Samsung already testing 40 Gbps GDDR7 memory modules with 3 GB capacity, it will be interesting to see where these modules will be used. For NVIDIA's mid-cycle SUPER refresh of the GeForce RTX 50-series GPUs, the company is likely to use chips that are already in mass production, as the sampling stage alone is not sufficient for a product rollout. Ensuring a proper supply is crucial, so a proper stock of GDDR7 chips must pile up first.