Marvell recently showcased its custom silicon IP advancements at the Marvell Analyst Day 2025. The company has developed SRAM IP that surpasses industry standards in terms of power efficiency and density. Initially launched in June , their 2 nm SRAM IP now reveals performance figures that highlight its superiority over standard solutions. In a 256K instance comparison, Marvell reports an 80% reduction in total power consumption, a 37% smaller area, and cycle times that are 22% faster. Additionally, Marvell's memory layout is more rectangular, facilitating easier integration into dense SoCs.

Further comparisons with top alternatives show that Marvell's custom SRAM uses 50% less area at the same bandwidth, reduces standby power by 66%, and delivers 17 times more bandwidth per mm² when normalized by area. These improvements are attributed to redesigned clocking and port structures that enhance bandwidth from on-die SRAM. Marvell argues that this architectural approach results in significantly higher bandwidth density and lower power consumption compared to standard dense SRAM IP. In an era where logic scaling continues to outpace memory in modern semiconductor nodes, having custom IP that aggressively boosts SRAM density and reduces power usage is a massive advantage.