TSMC has announced that it has started 2 nm mass production in Fab 22 which is located in the southern city of Kaohsiung in Taiwan. This is TSMC's first fab this far south in Taiwan and it's the first phase of as many as five that will be at this location. The fab is using 300 mm wafers and TSMC's first-generation nanosheet transistor technology on the N2 node. TSMC has already stated that the N2 node is offering a full node jump in terms of performance and power benefits, although the company is comparing the N2 node to its second generation N3E node, not the original N3 node, suggesting that the N2 node is slightly better than a regular full node improvement for TSMC.

The N2 node also includes some new additions that TSMC claims will further boost performance, in the shape of a low-resistance redistribution layer (RDL) and super high-performance metal-insulator-metal (MiM) capacitors. Time will tell how these advancements play out in real world products, once we find out which customers are first out with chips built on the N2 node. The N2 node is said to offer a 10 to 15 percent performance increase at the same power consumption or a 25 to 30 percent reduction in power at the same performance, compared to the N3E node, as well as a transistor density increase of around 15 percent.