At NEPCON Japan 2026, Intel showcased its latest glass substrate technology designed to power the next generation of advanced AI and HPC accelerators. According to SemiVision Taiwan , which shared one of the slides, Intel has developed a new high-performance core glass substrate measuring 78x77 mm for the entire package. This substrate can accommodate approximately twice the reticle size with silicon, equating to about 1,716 mm² (2x858 mm²) of silicon area for logic and memory. It is the first 10-2-10-thick glass core substrate featuring Intel's EMIB multi-chip module technology. This configuration includes 10 redistribution layer (RDL) build-up layers on the top of the substrate, which are used to redistribute signals from the die. These layers handle fine pitch routing, with Intel dedicating as many as 10 layers for this purpose.

The core of the glass substrate consists of two layers and is made of 800 μm (or 0.8 mm) class material, which may include embedded metal layers for through-glass-vias (TGVs) or power/ground planes. The final "10" number denotes the number of build-up layers on the bottom (or back) side, mirroring the top for symmetric routing to connect to the motherboard/PCB. This layer also serves to "declutter" the sea of wires that the silicon die exposes, but makes it much more approachable to a standard motherboard/PCB that the chip mounts on. Intel's 10-2-10 glass core substrate is also equipped with some of the finest bump pitches in the market, with 45 μm (only 0.045 mm) bump pitch. Finally, Intel embeds two EMIB bridges for multi-chip-module packaging so you can manufacture several smaller dies and interconnect them via EMIB bridge, present on the glass core.