Forge Nano, Inc., a technology company pioneering domestic battery and semiconductor innovations, today announced a breakthrough that fundamentally redefines the economics and architecture of advanced semiconductor manufacturing. The company has demonstrated high-speed, defect-free atomic layer deposition (ALD) coatings in semiconductor features at a 1000:1 aspect ratio. Conformality is maintained at production-scale while providing coverage on features 2 orders of magnitude greater than line-of-sight techniques.

This breakthrough removes the primary constraint that has limited 3D semiconductor scaling and enables architectures previously considered uneconomic or impossible. The demonstration was performed on production-representative wafers supplied by C2MI, a leading semiconductor process development and manufacturing innovation center in Canada, with conformality, defectivity and electrical performance independently validated through the partner's internal metrology and reliability testing.