South Korean memory makers, SK hynix and Samsung, are preparing to showcase their next-generation LPDDR6 memory solutions at the International Solid-State Circuits Conference (ISSCC) 2026 in San Francisco, which will take place from February 15-19. As the premier event for showcasing advancements in silicon design, South Korean makers will present their best new technologies. For SK hynix and Samsung, this includes an update to their low-power DDR memory, now in its 6th generation. The LPDDR6 modules from SK hynix will arrive in 16 Gb capacities and offer a transfer rate per pin of 14.4 Gbps, built on the 1c generation (1γ generation) semiconductor node, which is the company's 6th generation of 10 nm DRAM. SK hynix runs these new modules at JEDEC's highest LPDDR6 speeds, meaning that the company is close to maxing out the new technology, and overclocked LPDDR6X versions might be arriving soon.

Samsung, on the other hand, has improved its LPDDR6 since the original CES 2026 presentation. The company will now present its 16 Gb LPDDR6 modules running at 12.8 Gbps, which is a significant improvement over the 10.7 Gbps modules from a few weeks ago. Samsung reportedly manufactures this LPDDR6 memory on a 12 nm process, which is slightly larger than SK hynix's 10 nm, but these modules also deliver great benefits. The company claims a 21% improvement in energy efficiency over its predecessor LPDDR5X. Additionally, Samsung's LPDDR6 memory uses NRZ signaling for I/O with a 12DQ subchannel, while SK hynix modules likely follow suit.