Samsung projects HBM sales to more than triple in 2026 on HBM4 ramp
Samsung Electronics says it has begun mass production of HBM4 and has shipped commercial products to customers, marking what the company describes as a first for commercial HBM4 shipments.
In its announcement, Samsung says HBM4 delivers a consistent 11.7 Gbps transfer rate per pin and can be tuned up to 13 Gbps. The company positions 11.7 Gbps as about 46% higher than an 8 Gbps “industry standard,” and also says it is 1.22x higher than the maximum pin speed it cites for HBM3E.
Samsung also lists up to 3.3 TB/s of memory bandwidth per stack , which it says is 2.7x higher than HBM3E. For capacity, Samsung says it will offer 12-layer stacks from 24GB to 36GB, and plans 16-layer stacks up to 48GB aligned to customer timelines.
Source: Samsung
On the manufacturing side, Samsung says HBM4 uses its 1c DRAM process (described as 6th-generation 10 nm-class) paired with a 4 nm logic base die. The company says it addressed the move from 1,024 to 2,048 I/O pins with low-power design changes, and it reports a 40% power-efficiency improvement, along with a 10% gain in thermal resistance and 30% improvement in heat dissipation versus HBM3E.
Samsung is expanding HBM4 production capacity and expects its total HBM sales to more than triple in 2026 compared to 2025. It also says HBM4E sampling is planned for the second half of 2026, while custom HBM samples are expected to reach customers in 2027 based on their specifications.
HBM4 for NVIDIA, AMD and Intel
Samsung has not confirmed who the first customer is, but publicly confirmed HBM4 users so far are limited to NVIDIA, AMD and possibly Intel. NVIDIA says its Rubin GPU incorporates HBM4, and AMD lists HBM4 (432GB) for the Instinct MI430X. Intel has not published a comparable product spec, but HBM4 is being linked to its next Gaudi generation (Jaguar Shores).
Source: Samsung PR
