Samsung Electronics Co., Ltd., a global leader in advanced memory technology, today announced that it has begun mass production of its industry-leading HBM4 and has shipped commercial products to customers. This achievement marks a first in the industry, securing an early leadership position in the HBM4 market. By proactively leveraging its most advanced 6th-generation 10 nanometer (nm)-class DRAM process (1c), the company achieved stable yields and industry-leading performance from the outset of mass production—all accomplished seamlessly and without any additional redesigns.

"Instead of taking the conventional path of utilizing existing proven designs, Samsung took the leap and adopted the most advanced nodes like the 1c DRAM and 4 nm logic process for HBM4," said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics. "By leveraging our process competitiveness and design optimization, we are able to secure substantial performance headroom, enabling us to satisfy our customers' escalating demands for higher performance, when they need them."