Samsung reportedly samples LPDDR6X for 2027 chips
SK Hynix LPPDR6 spec update
SK hynix is set to show a 16Gbit (2GB) LPDDR6 SDRAM design at International Solid-State Circuits Conference (ISSCC) 2026, which runs February 15 to 19 in San Francisco. . The part targets 14.4Gbps per I/O pin, which aligns with the top transfer rate defined for LPDDR6.
SK hynix says the 16Gbit LPDDR6 design is built on its 1c (1γ) DRAM process, its latest 10nm-class node. The ISSCC preview also notes the paper focuses on power saving and signal handling changes aimed at hitting 14.4Gbps operation.
Source: SK Hynix
Samsung LPPDR6X sampling
Separately, Samsung Electronics has reportedly supplied LPDDR6X samples to Qualcomm, according to The Bell. The report calls it unusual because LPDDR6 is not yet in broad commercial rollout, while LPDDR6X is positioned as a follow-on standard with details still pending, and it pegs LPDDR6X commercialization around the second half of 2027.
An official familiar with Samsung Electronics said, “It is unusual to receive samples of next-generation chips that are currently under development,” and “Qualcomm’s chip development schedule appears to be tight.”
The industry believes that Qualcomm’s request for LPDDR6X samples is linked to the development of next-generation semiconductors for servers and vehicles. Qualcomm plans to apply LPDDR6X to its AI accelerator ‘AI250’, which is scheduled to be released in 2027.
— The Bell
The Bell also links Qualcomm’s LPDDR6X sampling to its AI accelerator roadmap, describing AI200 (planned for 2026) and AI250 (planned for 2027) as inference-oriented parts that use LPDDR instead of HBM. It adds that other AI silicon vendors, including Nvidia and Meta, have been expanding LPDDR use in inference-focused designs to reduce cost and power versus HBM-heavy approaches.
Put together, the two reports show LPDDR6 moving toward the current 14.4Gbps ceiling in vendor roadmaps, while LPDDR6X sampling starts in parallel for platforms that target 2027.
